Semiconductor device

Invention Grant

US07667295B2 Semiconductor device 有权

Title translation: 半导体器件

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Patent Title: Semiconductor device
Patent Title (中): 半导体器件
Application No.: US12153345

Application Date: 2008-05-16
Publication No.: US07667295B2

Publication Date: 2010-02-23
Inventor: Hiroki Fujii
Applicant: Hiroki Fujii
Applicant Address: JP Kawasaki, Kanagawa
Assignee: NEC Electronics Corporation
Current Assignee: NEC Electronics Corporation
Current Assignee Address: JP Kawasaki, Kanagawa
Agency: McGinn IP Law Group, PLLC
Priority: JP2007-133379 20070518
Main IPC: H01L29/73
IPC: H01L29/73 ; H01L29/735

Abstract:

In a semiconductor device including a bipolar transistor, a base region has a two layer structure including a first base region, and a second base region which is provided around the first base region and has a lower impurity density than that of the first base region and has a shallower depth than that of the first base region.

Abstract(Chinese):

在包括双极晶体管的半导体器件中，基极区域具有包括第一基极区域和第二基极区域的二层结构，该第二基极区域设置在第一基极区域周围并且具有比第一基极区域的杂质密度低的杂质密度，具有比第一基部区域浅的深度。

Public/Granted literature

US20080283967A1 Semiconductor device Public/Granted day:2008-11-20

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/68	..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/70	...双极器件
H01L29/72	....晶体管型器件，如连续响应于所施加的控制信号的
H01L29/73	.....双极结型晶体管