Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12057328Application Date: 2008-03-27
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Publication No.: US07667307B2Publication Date: 2010-02-23
- Inventor: Kuniharu Muto , Toshiyuki Hata , Hiroshi Sato , Hiroi Oka , Osamu Ikeda
- Applicant: Kuniharu Muto , Toshiyuki Hata , Hiroshi Sato , Hiroi Oka , Osamu Ikeda
- Applicant Address: JP Tokyo
- Assignee: Renesas Technology Corp.
- Current Assignee: Renesas Technology Corp.
- Current Assignee Address: JP Tokyo
- Agency: Miles & Stockbridge P.C.
- Priority: JP2007-118833 20070427; JP2007-162684 20070620
- Main IPC: H01L23/495
- IPC: H01L23/495

Abstract:
To actualize a reduction in the on-resistance of a small surface mounted package having a power MOSFET sealed therein. A silicon chip is mounted on a die pad portion integrated with leads configuring a drain lead. The silicon chip has, on the main surface thereof, a source pad and a gate pad. The backside of the silicon chip configures a drain of a power MOSFET and bonded to the upper surface of a die pad portion via an Ag paste. A lead configuring a source lead is electrically coupled to the source pad via an Al ribbon, while a lead configuring a gate lead is electrically coupled to the gate pad via an Au wire.
Public/Granted literature
- US20080265386A1 SEMICONDUCTOR DEVICE Public/Granted day:2008-10-30
Information query
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