Invention Grant
- Patent Title: Paper including semiconductor device and manufacturing method thereof
- Patent Title (中): 纸包括半导体器件及其制造方法
-
Application No.: US11819157Application Date: 2007-06-25
-
Publication No.: US07667310B2Publication Date: 2010-02-23
- Inventor: Yoshitaka Dozen , Tomoyuki Aoki , Hidekazu Takahashi , Daiki Yamada , Kaori Ogita , Naoto Kusumoto
- Applicant: Yoshitaka Dozen , Tomoyuki Aoki , Hidekazu Takahashi , Daiki Yamada , Kaori Ogita , Naoto Kusumoto
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2006-175678 20060626
- Main IPC: H01L23/06
- IPC: H01L23/06

Abstract:
Paper embedded with a semiconductor device capable of communicating wirelessly is realized, whose unevenness of a portion including the semiconductor device does not stand out and the paper is thin with a thickness of less than or equal to 130 μm. A semiconductor device is provided with a circuit portion and an antenna, and the circuit portion includes a thin film transistor. The circuit portion and the antenna are separated from a substrate used during manufacturing, and are interposed between a flexible base and a sealing layer and protected. The semiconductor device can be bent, and the thickness of the semiconductor device itself is less than or equal to 30 μm. The semiconductor device is embedded in a paper in a papermaking process.
Public/Granted literature
- US20080012126A1 Paper including semiconductor device and manufacturing method thereof Public/Granted day:2008-01-17
Information query
IPC分类: