Invention Grant
- Patent Title: Power semiconductor component, power semiconductor device as well as methods for their production
- Patent Title (中): 功率半导体元件，功率半导体器件及其生产方法
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Application No.: US11736999Application Date: 2007-04-18
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Publication No.: US07667326B2Publication Date: 2010-02-23
- Inventor: Josef Hoeglauer , Ralf Otremba , Xaver Schloegel
- Applicant: Josef Hoeglauer , Ralf Otremba , Xaver Schloegel
- Applicant Address: DE Munich
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Munich
- Agency: Banner & Witcoff, Ltd.
- Priority: DE102006018765 20060420
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L29/40
Abstract:
A power semiconductor component (2) has a semiconductor body with a front face (7) and a rear face (9). The front face (7) has a front-face metallization (8), which provides at least one first contact pad (11). A structured metal seed layer (14) is provided as the front-face metallization (8), is arranged directly on the semiconductor body, and has a thickness d, where 1 nm≦d≦0.5 μm.
Public/Granted literature
- US20070246838A1 Power Semiconductor Component, Power Semiconductor Device As Well As Methods For Their Production Public/Granted day:2007-10-25
Information query
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