Invention Grant
- Patent Title: Integrated matching networks and RF devices that include an integrated matching network
- Patent Title (中): 集成匹配网络和RF设备，包括集成匹配网络
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Application No.: US12390549Application Date: 2009-02-23
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Publication No.: US07667334B2Publication Date: 2010-02-23
- Inventor: Melvy F. Miller , Juergen A. Foerstner
- Applicant: Melvy F. Miller , Juergen A. Foerstner
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agency: Ingrassia, Fisher & Lorenz, P.C.
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L21/44
Abstract:
An integrated matching network includes a first die on a substrate, a second die on the substrate, and a metallization layer on the first and second dies. The second die has a capacitance, the metallization layer has an inductance, and the capacitance and inductance together provide a shunt impedance from the first die to the substrate. The integrated matching network includes a first die having a power amplifier, a second die having a capacitor, and a metal interconnect coupled to the power amplifier and the first capacitor. The metal interconnect has an inductance. The capacitor and metal interconnect form a shunt impedance.
Public/Granted literature
- US20090152698A1 INTEGRATED MATCHING NETWORKS AND RF DEVICES THAT INCLUDE AN INTEGRATED MATCHING NETWORK Public/Granted day:2009-06-18
Information query
IPC分类:
