Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US11889113Application Date: 2007-08-09
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Publication No.: US07667336B2Publication Date: 2010-02-23
- Inventor: Toshiya Ishio
- Applicant: Toshiya Ishio
- Applicant Address: JP Osaka
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Osaka
- Agency: Nixon & Vanderhye, PC
- Priority: JP2006-220563 20060811
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/48 ; H01L29/40 ; H01L23/485 ; H01L23/488

Abstract:
A semiconductor device provided with a semiconductor chip wherein an electrode pad is formed on a circuit formation surface, includes a first passivation film, which serves as an adhering layer; a second passivation film formed on the first passivation film, for protecting the semiconductor chip from external physical damage; a metal film formed so as to cover at least a first electrode-pad opening section of the first passivation film; and an external connection terminal to connect the electrode pad to an external equipment. A second electrode-pad opening section of the second passivation film is formed so as to expose the first electrode-pad opening section entirely. The second passivation film is formed so as not to be in direct contact with the electrode pad.
Public/Granted literature
- US20080036086A1 Semiconductor device and method for manufacturing the same Public/Granted day:2008-02-14
Information query
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