Invention Grant
US07667400B1 Back-illuminated Si photomultipliers: structure and fabrication methods
失效
背照式Si光电倍增管:结构和制作方法
- Patent Title: Back-illuminated Si photomultipliers: structure and fabrication methods
- Patent Title (中): 背照式Si光电倍增管:结构和制作方法
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Application No.: US11811121Application Date: 2007-06-07
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Publication No.: US07667400B1Publication Date: 2010-02-23
- Inventor: Alexander O. Goushcha
- Applicant: Alexander O. Goushcha
- Applicant Address: US CA Costa Mesa
- Assignee: Array Optronix, Inc.
- Current Assignee: Array Optronix, Inc.
- Current Assignee Address: US CA Costa Mesa
- Agency: Blakely Sokoloff Taylor & Zafman LLP
- Main IPC: H01J43/04
- IPC: H01J43/04

Abstract:
Back-illuminated silicon photomultipliers having a substrate of a first conductivity type having front and back sides, a matrix of regions of a second conductivity type in the substrate, a matrix of regions of the first conductivity type under the matrix of regions of the second conductivity type and adjacent the back side of the substrate, with the bottom of the matrix of regions of the second conductivity type forming a p/n junction with the substrate or a matrix of regions of the second conductivity type, the matrix of regions of the first conductivity type having a higher conductivity than the substrate, a common anode formed by a uniform layer of the first conductivity type of higher conductivity than the substrate on the back side of the substrate. Preferably a plurality of trenches filed with an opaque material are provided in the back side of the substrate, the substrate preferably having a thickness of less than approximately 150 um.
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