Invention Grant
US07667519B2 Biasing circuit for pass transistor for voltage level translator circuit
有权
用于电压电平转换电路的通过晶体管的偏置电路
- Patent Title: Biasing circuit for pass transistor for voltage level translator circuit
- Patent Title (中): 用于电压电平转换电路的通过晶体管的偏置电路
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Application No.: US11419831Application Date: 2006-05-23
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Publication No.: US07667519B2Publication Date: 2010-02-23
- Inventor: Mark Welty
- Applicant: Mark Welty
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent William B. Kempler; Wade J. Brady III; Frederick J. Telecky, Jr.
- Main IPC: H03L5/00
- IPC: H03L5/00

Abstract:
A pass transistor signal level translator between a first voltage level and a higher second voltage level having a bias circuit for the pass transistor including a first switching circuit coupled to the first voltage level for providing a bias voltage that is less than the first voltage level. A second switching circuit is coupled to the second voltage level for providing a pulse at substantially the second voltage to the bias voltage. A voltage clamping circuit is coupled between the bias voltage and a reference voltage.
Public/Granted literature
- US20060261877A1 BIASING CIRCUIT FOR PASS TRANSISTOR FOR VOLTAGE LEVEL TRANSLATOR CIRCUIT Public/Granted day:2006-11-23
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