Invention Grant
US07667519B2 Biasing circuit for pass transistor for voltage level translator circuit 有权
用于电压电平转换电路的通过晶体管的偏置电路

  • Patent Title: Biasing circuit for pass transistor for voltage level translator circuit
  • Patent Title (中): 用于电压电平转换电路的通过晶体管的偏置电路
  • Application No.: US11419831
    Application Date: 2006-05-23
  • Publication No.: US07667519B2
    Publication Date: 2010-02-23
  • Inventor: Mark Welty
  • Applicant: Mark Welty
  • Applicant Address: US TX Dallas
  • Assignee: Texas Instruments Incorporated
  • Current Assignee: Texas Instruments Incorporated
  • Current Assignee Address: US TX Dallas
  • Agent William B. Kempler; Wade J. Brady III; Frederick J. Telecky, Jr.
  • Main IPC: H03L5/00
  • IPC: H03L5/00
Biasing circuit for pass transistor for voltage level translator circuit
Abstract:
A pass transistor signal level translator between a first voltage level and a higher second voltage level having a bias circuit for the pass transistor including a first switching circuit coupled to the first voltage level for providing a bias voltage that is less than the first voltage level. A second switching circuit is coupled to the second voltage level for providing a pulse at substantially the second voltage to the bias voltage. A voltage clamping circuit is coupled between the bias voltage and a reference voltage.
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