Invention Grant
- Patent Title: Apparatus and method for preventing copper peeling in ECP
- Patent Title (中): 用于防止ECP中铜剥落的装置和方法
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Application No.: US11510951Application Date: 2006-08-28
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Publication No.: US07667835B2Publication Date: 2010-02-23
- Inventor: Hsi-Kuei Cheng , Jung-Chih Tsao , Hsien-Ping Feng , Ming-Yuan Cheng , Steven Lin , Ray Chuang
- Applicant: Hsi-Kuei Cheng , Jung-Chih Tsao , Hsien-Ping Feng , Ming-Yuan Cheng , Steven Lin , Ray Chuang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Thomas, Kayden, Horstemeyer & Risley
- Main IPC: G01N21/00
- IPC: G01N21/00 ; G01N21/55 ; G01B11/28 ; C25D21/12 ; H01L21/00

Abstract:
An apparatus and method for preventing the peeling of electroplated metal from a wafer, is disclosed. The apparatus includes a seed layer detector system having a light source and a reflectivity detector. According to the method, the light source emits a beam of light onto a wafer and the reflectivity detector receives the light reflected from the wafer. The reflectivity of the wafer surface is measured to determine the presence or absence of a seed layer on the wafer, as well as whether the seed layer has a minimum thickness for optimum electroplating of a metal onto the seed layer.
Public/Granted literature
- US20080047827A1 Apparatus and method for preventing copper peeling in ECP Public/Granted day:2008-02-28
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