Invention Grant
- Patent Title: Method and apparatus for controlling write parameter according to voltage variation
- Patent Title (中): 根据电压变化控制写入参数的方法和装置
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Application No.: US11700845Application Date: 2007-02-01
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Publication No.: US07667917B2Publication Date: 2010-02-23
- Inventor: Jong-Yun Yun
- Applicant: Jong-Yun Yun
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2006-0010857 20060203
- Main IPC: G11B5/02
- IPC: G11B5/02
Abstract:
Provided is a method and an apparatus for controlling a write parameter according to a voltage variation. The method for controlling the write parameter includes monitoring a voltage supplied to a pre-amplifier before performing a write operation and adjusting the write parameter supplied to the pre-amplifier based on the monitoring result. Controlling the write parameter includes reading a predetermined write parameter from a write parameter table based on the monitoring result, and adjusting the read write parameter to the write parameter which will be supplied to the pre-amplifier.
Public/Granted literature
- US20070195446A1 Method and apparatus for controlling write parameter according to voltage variation Public/Granted day:2007-08-23
Information query
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