Invention Grant
US07668000B2 Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance
有权
提供使用可变电阻存储单元和电容的交叉点存储器阵列的方法和装置
- Patent Title: Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance
- Patent Title (中): 提供使用可变电阻存储单元和电容的交叉点存储器阵列的方法和装置
-
Application No.: US11768125Application Date: 2007-06-25
-
Publication No.: US07668000B2Publication Date: 2010-02-23
- Inventor: Glen Hush
- Applicant: Glen Hush
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dickstein Shapiro LLP
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
The invention relates to a method and apparatus providing a memory cell array in which each resistance memory cell is connected in series to a capacitive element. Access transistors are not necessary to perform read and write operations on the memory cell. In one exemplary embodiment, the capacitive element is a capacitor.
Public/Granted literature
Information query
