Invention Grant
US07668004B2 Non-volatile switching and memory devices using vertical nanotubes
失效
使用垂直纳米管的非易失性开关和存储器件
- Patent Title: Non-volatile switching and memory devices using vertical nanotubes
- Patent Title (中): 使用垂直纳米管的非易失性开关和存储器件
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Application No.: US12019746Application Date: 2008-01-25
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Publication No.: US07668004B2Publication Date: 2010-02-23
- Inventor: Toshiharu Furukawa , Mark Charles Hakey , Steven John Holmes , David Vaclav Horak , Charles William Koburger, III
- Applicant: Toshiharu Furukawa , Mark Charles Hakey , Steven John Holmes , David Vaclav Horak , Charles William Koburger, III
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Schmeiser, Olsen & Watts
- Agent Richard M. Kotulak
- Main IPC: G11C11/50
- IPC: G11C11/50
Abstract:
Non-volatile and radiation-hard switching and memory devices using vertical nano-tubes and reversibly held in state by van der Waals' forces and methods of fabricating the devices. Means for sensing the state of the devices include measuring capacitance, and tunneling and field emission currents.
Public/Granted literature
- US20080137397A1 NON-VOLATILE SWITCHING AND MEMORY DEVICES USING VERTICAL NANOTUBES Public/Granted day:2008-06-12
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