Invention Grant
- Patent Title: Memory cell programming
- Patent Title (中): 存储单元编程
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Application No.: US11932096Application Date: 2007-10-31
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Publication No.: US07668012B2Publication Date: 2010-02-23
- Inventor: Seiichi Aritome
- Applicant: Seiichi Aritome
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch, PLLC
- Main IPC: G11C16/04
- IPC: G11C16/04

Abstract:
One or more embodiments include programming, in parallel, a first cell to one of a first number of states and a second cell to one of a second number of states. Such embodiments include programming, separately, the first cell to one of a third number of states based, at least in part, on the one of the first number of states and the second cell to one of a fourth number of states based, at least in part, on the one of the second number of states.
Public/Granted literature
- US20090109746A1 MEMORY CELL PROGRAMMING Public/Granted day:2009-04-30
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