Invention Grant
- Patent Title: Method of erasing non-volatile memory cells
- Patent Title (中): 擦除非易失性存储单元的方法
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Application No.: US11205716Application Date: 2005-08-17
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Publication No.: US07668017B2Publication Date: 2010-02-23
- Inventor: Eli Lusky , Boaz Eitan
- Applicant: Eli Lusky , Boaz Eitan
- Applicant Address: IL Netanya
- Assignee: Saifun Semiconductors Ltd.
- Current Assignee: Saifun Semiconductors Ltd.
- Current Assignee Address: IL Netanya
- Agency: Eitan Mehulal Law Group
- Main IPC: G11C16/06
- IPC: G11C16/06

Abstract:
A method includes determining groups of rows to erase together in order to minimize the margin loss associated with bake after a large number of program and erasure cycles. The method alternatively includes determining groups of rows to erase together to minimize the width of a resultant erase threshold voltage distribution, erasing the groups together, stopping erasure of a group when the group is erase verified and performing the step of erasing on those groups which were not previously erase verified.
Public/Granted literature
- US20070041249A1 Method of erasing non-volatile memory cells Public/Granted day:2007-02-22
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