Invention Grant
US07668025B2 Input circuit of semiconductor memory apparatus and control method of the same 有权
半导体存储器的输入电路及其控制方法

  • Patent Title: Input circuit of semiconductor memory apparatus and control method of the same
  • Patent Title (中): 半导体存储器的输入电路及其控制方法
  • Application No.: US12107710
    Application Date: 2008-04-22
  • Publication No.: US07668025B2
    Publication Date: 2010-02-23
  • Inventor: Young-Ju Kim
  • Applicant: Young-Ju Kim
  • Applicant Address: KR
  • Assignee: Hynix Semiconductor Inc.
  • Current Assignee: Hynix Semiconductor Inc.
  • Current Assignee Address: KR
  • Agency: Baker & McKenzie LLP
  • Priority: KR10-2007-0099989 20071004; KR10-2008-0012861 20080213
  • Main IPC: G11C7/00
  • IPC: G11C7/00
Input circuit of semiconductor memory apparatus and control method of the same
Abstract:
An input circuit of a semiconductor memory apparatus includes a first frequency control unit which receives a first signal and a second frequency control unit which receives a second signal. The first frequency control unit outputs the first signal to the second frequency control unit in response to a test mode signal and generates a third signal which has a frequency higher than the frequencies of the first and second signals by using the first and second signals. Also, the second frequency control unit outputs the second signal to the first frequency control unit in response to the test mode signal and generates a fourth signal which has a frequency higher than the frequencies of the first and second signals by using the first and second signals.
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