Invention Grant
US07668682B2 Method and circuit for detecting and compensating for a degradation of a semiconductor device 有权
用于检测和补偿半导体器件劣化的方法和电路

Method and circuit for detecting and compensating for a degradation of a semiconductor device
Abstract:
A design structure and method comprising a degradation detection circuit configured to respond to degradation. The degradation detection circuit is located within a semiconductor device and comprises a process sensitive circuit, a measurement circuit, a calculation circuit, and a control circuit. The method comprises subjecting the semiconductor device to a first operating condition. A first value at a first time for a parameter of the process sensitive circuit is measured by the measurement circuit. The semiconductor device is operated to perform an intended function. A second value at a second time for the parameter of the circuit is measured by the measurement circuit. The second time is different from the first time. A first differential value between the first value and the second value is determined by the calculation circuit. The control circuit is configured to receive an enable signal.
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