Invention Grant
- Patent Title: Method and circuit for detecting and compensating for a degradation of a semiconductor device
- Patent Title (中): 用于检测和补偿半导体器件劣化的方法和电路
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Application No.: US11923701Application Date: 2007-10-25
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Publication No.: US07668682B2Publication Date: 2010-02-23
- Inventor: Christopher Gonzalez , Vinod Ramadurai , Norman Jay Rohrer
- Applicant: Christopher Gonzalez , Vinod Ramadurai , Norman Jay Rohrer
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Schmeiser, Olsen & Watts
- Agent Michael J. LeStrange
- Main IPC: G06F17/50
- IPC: G06F17/50 ; G06F11/22

Abstract:
A design structure and method comprising a degradation detection circuit configured to respond to degradation. The degradation detection circuit is located within a semiconductor device and comprises a process sensitive circuit, a measurement circuit, a calculation circuit, and a control circuit. The method comprises subjecting the semiconductor device to a first operating condition. A first value at a first time for a parameter of the process sensitive circuit is measured by the measurement circuit. The semiconductor device is operated to perform an intended function. A second value at a second time for the parameter of the circuit is measured by the measurement circuit. The second time is different from the first time. A first differential value between the first value and the second value is determined by the calculation circuit. The control circuit is configured to receive an enable signal.
Public/Granted literature
- US20090108863A1 METHOD AND CIRCUIT FOR DETECTING AND COMPENSATING FOR A DEGRADATION OF A SEMICONDUCTOR DEVICE Public/Granted day:2009-04-30
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