Invention Grant
- Patent Title: Method for fabricating a thin film resistor semiconductor structure
- Patent Title (中): 薄膜电阻半导体结构的制造方法
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Application No.: US11178673Application Date: 2005-07-11
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Publication No.: US07669313B2Publication Date: 2010-03-02
- Inventor: Joseph D. Fivas , Georgina Shah , Dianna L. Chandler
- Applicant: Joseph D. Fivas , Georgina Shah , Dianna L. Chandler
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Warren L. Franz; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01C17/00
- IPC: H01C17/00
Abstract:
A method is provided of fabricating a thin film resistor semiconductor structure. In one aspect of the invention, the method includes forming a dielectric layer over a semiconductor substrate, forming a thin film resistor on the dielectric layer, and annealing the thin film resistor at a substantially high temperature for a predetermined time period to set the thermal coefficient of resistance of the thin film resistor. A passivation layer is formed over the semiconductor structure.
Public/Granted literature
- US20070008062A1 Method for fabricating a thin film resistor semiconductor structure Public/Granted day:2007-01-11
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