Invention Grant
- Patent Title: Substrate polishing apparatus and substrate polishing method
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Application No.: US10559135Application Date: 2004-06-17
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Publication No.: US07670206B2Publication Date: 2010-03-02
- Inventor: Tetsuji Togawa , Koichi Fukaya , Mitsuo Tada , Taro Takahashi , Yasunari Suto
- Applicant: Tetsuji Togawa , Koichi Fukaya , Mitsuo Tada , Taro Takahashi , Yasunari Suto
- Applicant Address: JP Tokyo
- Assignee: Ebara Corporation
- Current Assignee: Ebara Corporation
- Current Assignee Address: JP Tokyo
- Agency: Wenderoth, Lind & Ponack, L.L.P.
- Priority: JP2003-174144 20030618
- International Application: PCT/JP2004/008855 WO 20040617
- International Announcement: WO2004/113020 WO 20041229
- Main IPC: B24B49/00
- IPC: B24B49/00

Abstract:
The present invention relates to a substrate polishing apparatus and a substrate polishing method for polishing a substrate such as a semiconductor wafer to a flat finish. The substrate polishing apparatus includes a polishing table (100) having a polishing surface (101), a substrate holder (1) for holding and pressing a substrate (W) against the polishing surface (101) of the polishing table (100), and a film thickness measuring device (200) for measuring a thickness of a film on the substrate (W). The substrate holder (1) has a plurality of pressure adjustable chambers (22 to 25), and pressures in the respective chambers (22 to 25) are adjusted based on the film thickness measured by the film thickness measuring device (200).
Public/Granted literature
- US20080139087A1 Substrate Polishing Apparatus And Substrate Polishing Method Public/Granted day:2008-06-12
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