Invention Grant
US07670496B2 Process for producing structural body and etchant for silicon oxide film
有权
用于生产氧化硅膜结构体和蚀刻剂的方法
- Patent Title: Process for producing structural body and etchant for silicon oxide film
- Patent Title (中): 用于生产氧化硅膜结构体和蚀刻剂的方法
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Application No.: US11011111Application Date: 2004-12-15
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Publication No.: US07670496B2Publication Date: 2010-03-02
- Inventor: Koichiro Saga , Hiroya Watanabe , Tomoyuki Azuma
- Applicant: Koichiro Saga , Hiroya Watanabe , Tomoyuki Azuma
- Applicant Address: JP Tokyo JP Tokyo
- Assignee: SONY Corporation,Mitsubishiki Gas Chemical Company, Inc.
- Current Assignee: SONY Corporation,Mitsubishiki Gas Chemical Company, Inc.
- Current Assignee Address: JP Tokyo JP Tokyo
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP2003-423966 20031222
- Main IPC: H01L21/302
- IPC: H01L21/302

Abstract:
A structural body comprising a substrate and a structural layer formed on the substrate through an air gap in which the structural layer functions as a micro movable element is produced by a process comprising a film-deposition step of successively forming a sacrificial layer made of a silicon oxide film and the structural layer on the substrate, an air gap-forming step of removing the sacrificial layer by etching with a treating fluid to form the air gap between the substrate and the structural layer, and a cleaning step. By using a supercritical carbon dioxide fluid containing a fluorine compound, a water-soluble organic solvent and water as the treating fluid, the sacrificial layer is removed in a short period of time with a small amount of the treating fluid without any damage to the structural body.
Public/Granted literature
- US20050205515A1 Process for producing structural body and etchant for silicon oxide film Public/Granted day:2005-09-22
Information query
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