Invention Grant
- Patent Title: Methods for atomic-layer deposition
- Patent Title (中): 原子层沉积方法
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Application No.: US11620324Application Date: 2007-01-05
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Publication No.: US07670646B2Publication Date: 2010-03-02
- Inventor: Kie Y. Ahn , Leonard Forbes
- Applicant: Kie Y. Ahn , Leonard Forbes
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: C23C16/00
- IPC: C23C16/00

Abstract:
Atomic-Layer deposition systems and methods provide a variety of electronic products. In an embodiment, a method uses an atomic-layer deposition system that includes an outer chamber, a substrate holder, and a gas-distribution fixture that engages or cooperates with the substrate holder to form an inner chamber within the outer chamber. The inner chamber has a smaller volume than the outer chamber, which leads to less time to fill and purge during cycle times for deposition of materials.
Public/Granted literature
- US20070101929A1 METHODS FOR ATOMIC-LAYER DEPOSITION Public/Granted day:2007-05-10
Information query
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