Invention Grant
- Patent Title: Pattern transfer method
- Patent Title (中): 模式转移方式
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Application No.: US11580955Application Date: 2006-10-16
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Publication No.: US07670747B2Publication Date: 2010-03-02
- Inventor: Toshio Ikugata , Akiko Miyakawa
- Applicant: Toshio Ikugata , Akiko Miyakawa
- Applicant Address: JP Tokyo
- Assignee: Nikon Corporation
- Current Assignee: Nikon Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oliff & Berridge, PLC
- Priority: JP2004-133840 20040428
- Main IPC: G03F7/00
- IPC: G03F7/00 ; G03F7/004

Abstract:
A pattern transfer method includes first through third steps. In the first step, a desired pattern is transferred onto a resin layer formed on a substrate, a release layer being disposed between the substrate and the resin layer. In the second step, which is executed after the first step, the pattern having been transferred onto the resin layer is transferred to the substrate and the release layer is partially exposed. In the third step, which is executed after the second step, the release layer present between the substrate and the resin layer is dissolved and is thus removed from the substrate.
Public/Granted literature
- US20070029686A1 Pattern transfer method Public/Granted day:2007-02-08
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