Invention Grant
- Patent Title: Micro pattern forming method and semiconductor device manufacturing method
- Patent Title (中): 微图案形成方法和半导体器件制造方法
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Application No.: US10692722Application Date: 2003-10-27
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Publication No.: US07670759B2Publication Date: 2010-03-02
- Inventor: Hiroshi Morioka
- Applicant: Hiroshi Morioka
- Applicant Address: JP Tokyo
- Assignee: Fujitsu Microelectronics Limited
- Current Assignee: Fujitsu Microelectronics Limited
- Current Assignee Address: JP Tokyo
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2002-312941 20021028
- Main IPC: G03F1/00
- IPC: G03F1/00 ; B44C1/22
Abstract:
Photosensitive resist material is coated on a substrate and exposed and developed to form a resist pattern. The surface layer of sidewalls and a top wall of the resist pattern is etched by plasma of a mixture gas of a first gas and an SO2 gas, the first gas being at least one gas selected from a group consisting of He, Ne, Ar, Xe, Kr, CO, CO2 and N2. Resist pattern deformation and pattern collapse can be prevented while the resist pattern shrinks.
Public/Granted literature
- US20040157169A1 Micro pattern forming method and semiconductor device manufacturing method Public/Granted day:2004-08-12
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