Invention Grant
- Patent Title: Treatment for reduction of line edge roughness
- Patent Title (中): 减少线边缘粗糙度的处理
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Application No.: US11369513Application Date: 2006-03-06
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Publication No.: US07670760B2Publication Date: 2010-03-02
- Inventor: Jinmiao James Shen , Jonathan L. Cobb , William D. Darlington , Brian J. Fisher , Mark D. Hall , Vikas R. Sheth , Mehul D. Shroff , James E. Vasek
- Applicant: Jinmiao James Shen , Jonathan L. Cobb , William D. Darlington , Brian J. Fisher , Mark D. Hall , Vikas R. Sheth , Mehul D. Shroff , James E. Vasek
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agency: Fortkort & Houston P.C.
- Agent John A. Fortkort
- Main IPC: G03F1/00
- IPC: G03F1/00
Abstract:
A method for reducing line edge roughness (LER) in a layer of photoresist is provided. In accordance with the method, a layer of photoresist is applied to a substrate. The layer of photoresist is then patterned and annealed in an atmosphere comprising at least one gas selected from the group consisting of hydrogen, nitrogen and fluorine-containing materials. Preferably, the anneal is performed after patterning the photoresist, but either immediately after, or subsequent to, the trim.
Public/Granted literature
- US20070207404A1 Treatment for reduction of line edge roughness Public/Granted day:2007-09-06
Information query
