Nitride semiconductor substrate and method of making same

Invention Grant

US07670856B2 Nitride semiconductor substrate and method of making same 有权

Title translation: 氮化物半导体衬底及其制造方法

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Patent Title: Nitride semiconductor substrate and method of making same
Patent Title (中): 氮化物半导体衬底及其制造方法
Application No.: US11977704

Application Date: 2007-10-25
Publication No.: US07670856B2

Publication Date: 2010-03-02
Inventor: Takayuki Suzuki , Takeshi Meguro
Applicant: Takayuki Suzuki , Takeshi Meguro
Applicant Address: JP Tokyo
Assignee: Hitachi Cable, Ltd.
Current Assignee: Hitachi Cable, Ltd.
Current Assignee Address: JP Tokyo
Agency: Scully, Scott, Murphy & Presser, P.C.
Priority: JP2006-355008 20061228
Main IPC: H01L21/8252
IPC: H01L21/8252

Nitride semiconductor substrate and method of making same

Abstract:

A method of making a nitride semiconductor substrate having the steps of providing a free-standing substrate that is of a nitride semiconductor and has one of a penetrating pit and a penetrating crack that penetrate from a top surface to a back surface of the free-standing substrate, attaching a metal to the penetrating pit or the penetrating crack, the metal being adapted to be nitrided, and nitriding the metal to form a nitride that seals the penetrating pit or the penetrating crack. A nitride semiconductor substrate has a free-standing substrate that is formed of a nitride semiconductor and has one of a penetrating pit and a penetrating crack that penetrate from a top surface to a back surface of the free-standing substrate, and a metal nitride that seals the penetrating pit or the penetrating crack. The metal nitride is formed of GaN, InN and AlN.

Abstract(Chinese):

一种制造氮化物半导体衬底的方法，其具有以下步骤：提供具有氮化物半导体的自立式衬底，并且具有从自立式的顶表面到后表面穿透的穿透坑和穿透裂纹中的一种基板，将金属附着到穿透坑或穿透裂缝，金属适于被氮化，并且氮化金属以形成密封穿透坑或穿透裂纹的氮化物。氮化物半导体衬底具有由氮化物半导体形成的自立式衬底，并且具有从自立式衬底的顶表面到后表面穿透的穿透坑和穿透裂纹中的一种;以及金属氮化物密封穿透坑或穿透裂缝。金属氮化物由GaN，InN和AlN形成。

Public/Granted literature

US20080157282A1 Nitride semiconductor substrate and method of making same Public/Granted day:2008-07-03

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/8252	.....衬底是半导体的，采用Ⅲ-Ⅴ族工艺（H01L21/8258优先）