Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US11551487Application Date: 2006-10-20
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Publication No.: US07670859B2Publication Date: 2010-03-02
- Inventor: Terunao Hanaoka
- Applicant: Terunao Hanaoka
- Applicant Address: JP
- Assignee: Seiko Epson Corporation
- Current Assignee: Seiko Epson Corporation
- Current Assignee Address: JP
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: JP2005-306952 20051021
- Main IPC: H01L21/66
- IPC: H01L21/66 ; G01R31/26
Abstract:
A method for manufacturing a semiconductor device, includes: preparing a semiconductor module including: a semiconductor substrate having an electrode; a test pad electrically connected to the electrode; a land electrically connected to the test pad; and an external terminal provided on the land; and testing an electrical characteristic by bringing a probe into contact with the test pad.
Public/Granted literature
- US20070090854A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2007-04-26
Information query
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