Invention Grant
- Patent Title: Manufacturing method of semiconductor module including solid-liquid diffusion joining steps
- Patent Title (中): 包括固液扩散接合步骤的半导体模块的制造方法
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Application No.: US10591723Application Date: 2004-03-02
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Publication No.: US07670879B2Publication Date: 2010-03-02
- Inventor: Kozo Fujimoto , Hirohiko Watanabe , Kazutaka Ikemi , Keiichi Matsumura , Masayoshi Shimoda , Katsumi Taniguchi , Tomoaki Goto
- Applicant: Kozo Fujimoto , Hirohiko Watanabe , Kazutaka Ikemi , Keiichi Matsumura , Masayoshi Shimoda , Katsumi Taniguchi , Tomoaki Goto
- Applicant Address: JP
- Assignee: Fuji Electric Holdings Co., Ltd.
- Current Assignee: Fuji Electric Holdings Co., Ltd.
- Current Assignee Address: JP
- Agency: Rossi, Kimms & McDowell, LLP
- Priority: JP2002-254951 20020830; JP2003-298057 20030822
- International Application: PCT/JP2004/002538 WO 20040302
- International Announcement: WO2005/086218 WO 20050915
- Main IPC: H01L21/50
- IPC: H01L21/50 ; H01L21/44

Abstract:
The present invention provides a manufacturing method of a semiconductor module which enables the joining at a low temperature within a short time and can obtain more reliable joining portions by performing the joining without using a solder joining medium. The manufacturing method of a semiconductor module includes a first joining step for joining first circuit electrodes which are formed on a circuit board and back-surface-side die electrodes of a semiconductor die, a second joining step for joining the front-surface-side electrodes of the semiconductor die and one ends of lead frames, and a third joining step for joining another ends of the lead frame and second circuit electrodes which are formed on the circuit board, wherein a low-melting-temperature metal layer is formed on one conductive portion of a pair of conductive portions to be joined and, thereafter, the low-melting-temperature metal layer is heated and pressurized thus diffusing the low-melting-temperature metal layer into the pair of conductive portions by solid-liquid diffusion whereby the conductive portions are joined to each other.
Public/Granted literature
- US20070197017A1 Manufacturing method of semiconductor module Public/Granted day:2007-08-23
Information query
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