Invention Grant
- Patent Title: Manufacturing method of substrate having conductive layer and manufacturing method of semiconductor device
- Patent Title (中): 具有导电层的基板的制造方法和半导体装置的制造方法
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Application No.: US12268039Application Date: 2008-11-10
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Publication No.: US07670884B2Publication Date: 2010-03-02
- Inventor: Gen Fujii , Masafumi Morisue , Hironobu Shoji , Junya Maruyama , Kouji Dairiki , Tomoyuki Aoki
- Applicant: Gen Fujii , Masafumi Morisue , Hironobu Shoji , Junya Maruyama , Kouji Dairiki , Tomoyuki Aoki
- Applicant Address: JP Kanagawa-Ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-Ken
- Agency: Nixon Peabody LLP
- Agent Jeffrey L. Costellia
- Priority: JP2004-366595 20041217
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/24 ; H01L21/20
Abstract:
The manufacturing method of a substrate having a conductive layer has the steps of: forming an inorganic insulating layer over a substrate; forming an organic resin layer with a desired shape over the inorganic insulating layer; forming a low wettability layer with respect to a composition containing conductive particles on a first exposed portion of the inorganic insulating layer; removing the organic resin layer; and coating a second exposed portion of the inorganic insulating layer with a composition containing conductive particles and baking, thereby forming a conductive layer.
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