Invention Grant
- Patent Title: Method for fabricating polysilicon film
- Patent Title (中): 多晶硅薄膜制造方法
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Application No.: US11472858Application Date: 2006-06-22
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Publication No.: US07670886B2Publication Date: 2010-03-02
- Inventor: Ramesh Kakkad
- Applicant: Ramesh Kakkad
- Applicant Address: TW
- Assignee: TPO Displays Corp.
- Current Assignee: TPO Displays Corp.
- Current Assignee Address: TW
- Agency: Thomas, Kayden, Horstemeyer & Risley, LLP.
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method of fabricating a polysilicon film includes: forming a seed layer on a surface of a substrate; forming a silicon layer over the surface of the seed layer; and performing a laser annealing process to transform the silicon layer into a polysilicon layer at a laser energy equal to or greater than that needed to cause complete melting of the silicon layer.
Public/Granted literature
- US20070298595A1 Method for fabricating polysilicon film Public/Granted day:2007-12-27
Information query
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