Invention Grant
US07670890B2 Silicide block isolated junction field effect transistor source, drain and gate
有权
硅化物阻隔隔离结场效应晶体管源极，漏极和栅极
- Patent Title: Silicide block isolated junction field effect transistor source, drain and gate
- Patent Title (中): 硅化物阻隔隔离结场效应晶体管源极，漏极和栅极
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Application No.: US11493229Application Date: 2006-07-26
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Publication No.: US07670890B2Publication Date: 2010-03-02
- Inventor: Badih El-Kareh , Hiroshi Yasuda , Scott Gerard Balster , Philipp Steinmann , Joe R. Trogolo
- Applicant: Badih El-Kareh , Hiroshi Yasuda , Scott Gerard Balster , Philipp Steinmann , Joe R. Trogolo
- Applicant Address: DE Freising US TX Dallas
- Assignee: Texas Instruments Deutschland GmbH,Texas Instruments Incorporated
- Current Assignee: Texas Instruments Deutschland GmbH,Texas Instruments Incorporated
- Current Assignee Address: DE Freising US TX Dallas
- Agent Warren L. Franz; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L29/80
- IPC: H01L29/80 ; H01L21/337
Abstract:
An junction field effect transistor (JFET) is fashioned with a patterned layer of silicide block (SBLK) material utilized in forming gate, source and drain regions. Utilizing the silicide block in this manner helps to reduce low-frequency (flicker) noise associated with the JFET by suppressing the impact of surface states, among other things.
Public/Granted literature
- US20080026515A1 Silicide block isolated junction field effect transistor source, drain and gate Public/Granted day:2008-01-31
Information query
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