Selective high-k dielectric film deposition for semiconductor device

Invention Grant

US07670894B2 Selective high-k dielectric film deposition for semiconductor device 失效

Title translation: 用于半导体器件的选择性高k介电膜沉积

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Patent Title: Selective high-k dielectric film deposition for semiconductor device
Patent Title (中): 用于半导体器件的选择性高k介电膜沉积
Application No.: US12150898

Application Date: 2008-04-30
Publication No.: US07670894B2

Publication Date: 2010-03-02
Inventor: Willy Rachmady , Marko Radosavljevic , Mantu K. Hudait , Matthew V Metz
Applicant: Willy Rachmady , Marko Radosavljevic , Mantu K. Hudait , Matthew V Metz
Applicant Address: US CA Santa Clara
Assignee: Intel Corporation
Current Assignee: Intel Corporation
Current Assignee Address: US CA Santa Clara
Agency: Blakely, Sokoloff, Taylor & Zafman LLP
Main IPC: H01L21/8238
IPC: H01L21/8238 ; H01L21/44

Selective high-k dielectric film deposition for semiconductor device

Abstract:

Embodiments of the present invention describe a method of fabricating a III-V quantum well transistor with low current leakage and high on-to-off current ratio. A hydrophobic mask having an opening is formed on a semiconductor film. The opening exposes a portion on the semiconductor film where a dielectric layer is desired to be formed. A hydrophilic surface is formed on the exposed portion of the semiconductor film. A dielectric layer is then formed on the hydrophilic surface by using an atomic layer deposition process. A metal layer is deposited on the dielectric layer.

Abstract(Chinese):

本发明的实施例描述了一种制造具有低电流泄漏和高导通截止电流比的III-V量子阱晶体管的方法。在半导体膜上形成具有开口的疏水性掩模。该开口暴露出希望形成介电层的半导体膜上的一部分。亲水表面形成在半导体膜的暴露部分上。然后通过使用原子层沉积工艺在亲水表面上形成介电层。金属层沉积在电介质层上。

Public/Granted literature

US20090272965A1 Selective High-K dielectric film deposition for semiconductor device Public/Granted day:2009-11-05

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8238	........互补场效应晶体管，例如CMOS