Embodiments relate to a flash memory device and to method of fabricating a flash memory device is disclosed. According to embodiments, a method may include forming a device isolation layer on a semiconductor substrate to define active regions, forming floating gate patterns on the active regions, forming the photoresist patterns on the device isolation layer such that the photoresist patterns have side walls higher than the floating gate patterns, forming spacer patterns at the side walls of the photoresist patterns such that the spacer patterns partially cover the floating gate patterns, and etching the floating gate patterns by a predetermined depth using the spacer patterns as an etching mask.