Invention Grant
US07670916B2 Semiconductor device doped with Sb, Ga, or Bi and method of manufacturing the same
有权
用Sb，Ga或Bi掺杂的半导体器件及其制造方法
- Patent Title: Semiconductor device doped with Sb, Ga, or Bi and method of manufacturing the same
- Patent Title (中): 用Sb，Ga或Bi掺杂的半导体器件及其制造方法
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Application No.: US12417432Application Date: 2009-04-02
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Publication No.: US07670916B2Publication Date: 2010-03-02
- Inventor: Sang-Hun Jeon , Chung-Woo Kim , Hyun-Sang Hwang , Sung-Kweon Baek , Sang-Moo Choi
- Applicant: Sang-Hun Jeon , Chung-Woo Kim , Hyun-Sang Hwang , Sung-Kweon Baek , Sang-Moo Choi
- Applicant Address: KR Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Consulting, PLLC
- Priority: KR10-2005-0003982 20050115
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/76
Abstract:
A semiconductor memory device includes a first dopant area and a second dopant area in a semiconductor substrate, the first dopant area and the second dopant area doped with one selected from the group consisting of Sb, Ga, and Bi. The semiconductor memory device includes an insulating layer disposed in contact with the first dopant area and the second dopant area, and a gate electrode layer disposed in contact with the insulating layer.
Public/Granted literature
- US20090227081A1 SEMICONDUCTOR DEVICE DOPED WITH Sb, Ga, OR Bi AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2009-09-10
Information query
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