Invention Grant
- Patent Title: Methods and apparatus for forming a polysilicon capacitor
- Patent Title (中): 用于形成多晶硅电容器的方法和装置
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Application No.: US11697962Application Date: 2007-04-09
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Publication No.: US07670920B2Publication Date: 2010-03-02
- Inventor: Byron Lovell Williams , Maxwell Walthour Lippitt, III , C. Matthew Thompson
- Applicant: Byron Lovell Williams , Maxwell Walthour Lippitt, III , C. Matthew Thompson
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L29/94
Abstract:
An embodiment relates generally to a method of forming a capacitor. The method includes depositing a first layer of polysilicon on a substrate and implanting a high dose of implant into the first layer of polysilicon. The method also includes depositing a layer of dielectric over the first layer of polysilicon and depositing a second layer of polysilicon over the layer of dielectric. The method further includes implanting an equivalent concentration of implant in both the first layer of polysilicon into the second layer of polysilicon.
Public/Granted literature
- US20080246070A1 METHODS AND APPARATUS FOR FORMING A POLYSILICON CAPACITOR Public/Granted day:2008-10-09
Information query
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