Invention Grant
- Patent Title: Method of measuring alignment of measurement pattern
- Patent Title (中): 测量图案校准方法
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Application No.: US11481059Application Date: 2006-07-06
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Publication No.: US07670922B2Publication Date: 2010-03-02
- Inventor: Hiroyuki Yusa , Azusa Yanagisawa , Toshifumi Kikuchi , Akihiro Makiuchi
- Applicant: Hiroyuki Yusa , Azusa Yanagisawa , Toshifumi Kikuchi , Akihiro Makiuchi
- Applicant Address: JP Tokyo
- Assignee: Oki Semiconductor Co., Ltd.
- Current Assignee: Oki Semiconductor Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Kubotera & Associates, LLC
- Priority: JP2002-023278 20020131
- Main IPC: H01L23/544
- IPC: H01L23/544

Abstract:
A resist pattern for alignment measurement being shrunk by a heat flow includes a plurality of positive type or negative type line patterns. Widths of spaces between the line patterns are greater than twice those of the line patterns. Alternatively, the resist pattern comprises a box-shaped or slit-shaped measurement pattern and a pair of box-shaped or slit-shaped auxiliary patterns provided inside and outside the measurement pattern, respectively.
Public/Granted literature
- US20070004059A1 Method of measuring alignment of measurement pattern Public/Granted day:2007-01-04
Information query
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