Invention Grant
- Patent Title: Ultra-thin oxide bonding for S1 to S1 dual orientation bonding
- Patent Title (中): 超薄氧化物结合用于S1至S1双向接合
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Application No.: US11453444Application Date: 2006-06-14
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Publication No.: US07670928B2Publication Date: 2010-03-02
- Inventor: Mohamad A. Shaheen , Willy Rachmady , Peter Tolchinsky
- Applicant: Mohamad A. Shaheen , Willy Rachmady , Peter Tolchinsky
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L21/30
- IPC: H01L21/30 ; H01L21/46
Abstract:
A multi-layered substrate with bulk substrate characteristics and processes for the fabrication of such substrates are herein disclosed. The multi-layered substrate can include a first layer, a second layer and an interfacial layer therebetween. The first and second layers can be silicon, germanium, or any other suitable material of the same or different crystal orientations. The interfacial layer can be an oxide layer from about 5 Angstroms to about 50 Angstroms.
Public/Granted literature
- US20080099839A1 Ultra-thin oxide bonding for S1 to S1 dual orientation bonding Public/Granted day:2008-05-01
Information query
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