Invention Grant
US07670937B2 Method for producing doped regions in a substrate, and photovoltaic cell
有权
用于在衬底中产生掺杂区域的方法和光伏电池
- Patent Title: Method for producing doped regions in a substrate, and photovoltaic cell
- Patent Title (中): 用于在衬底中产生掺杂区域的方法和光伏电池
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Application No.: US11851818Application Date: 2007-09-07
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Publication No.: US07670937B2Publication Date: 2010-03-02
- Inventor: Yannick Veschetti , Armand Bettinelli
- Applicant: Yannick Veschetti , Armand Bettinelli
- Applicant Address: FR Paris
- Assignee: Commissariat a l'Energie Atomique
- Current Assignee: Commissariat a l'Energie Atomique
- Current Assignee Address: FR Paris
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR0653906 20060922
- Main IPC: H01L21/38
- IPC: H01L21/38

Abstract:
Method for producing doped regions on the rear face of a photovoltaic cell. A doping paste with a first type of conductivity is deposited on a rear face of a semiconductor-based substrate according to a pattern consistent with the desired distribution of regions doped with the first type of conductivity. Then, an oxide layer is deposited at least on the portions of the rear face of the substrate not covered with the doping paste. Finally, an annealing of the substrate diffuses the doping agents in the substrate and forms doped regions under the doping paste.
Public/Granted literature
- US20080076240A1 METHOD FOR PRODUCING DOPED REGIONS IN A SUBSTRATE, AND PHOTOVOLTAIC CELL Public/Granted day:2008-03-27
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