Enhanced mechanical strength via contacts

Invention Grant

US07670943B2 Enhanced mechanical strength via contacts 失效

Title translation: 通过触点增强机械强度

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Patent Title: Enhanced mechanical strength via contacts
Patent Title (中): 通过触点增强机械强度
Application No.: US12179054

Application Date: 2008-07-24
Publication No.: US07670943B2

Publication Date: 2010-03-02
Inventor: Chih-Chao Yang , Griselda Bonilla , Shyng-Tsong Chen , Kelly Malone
Applicant: Chih-Chao Yang , Griselda Bonilla , Shyng-Tsong Chen , Kelly Malone
Applicant Address: US NY Armonk
Assignee: International Business Machines Corporation
Current Assignee: International Business Machines Corporation
Current Assignee Address: US NY Armonk
Agent Joseph Petrokaitis
Main IPC: H01L21/4763
IPC: H01L21/4763

Enhanced mechanical strength via contacts

Abstract:

The present invention provides an enhanced interconnect structure with improved reliability. The inventive interconnect structure has enhanced mechanical strength of via contacts provided by embedded metal liners. The embedded metal liners may be continuous or discontinuous. Discontinuous embedded metal liners are provided by a discontinuous interface at the bottom of the via located within the interlayer dielectric layer.

Abstract(Chinese):

本发明提供了一种改进的可靠性的互连结构。本发明的互连结构具有增强的由嵌入式金属衬垫提供的通孔触点的机械强度。嵌入的金属衬垫可以是连续的或不连续的。不连续的嵌入式金属衬垫由位于层间介质层内的通孔底部的不连续界面提供。

Public/Granted literature

US20080280434A1 Enhanced Mechanical Strength Via Contacts Public/Granted day:2008-11-13

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）