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US07670948B2 Semiconductor device having diffusion barriers and a method of preventing diffusion of copper in a metal interconnection of a semiconductor device 失效
具有扩散阻挡层的半导体器件和防止铜在半导体器件的金属互连中扩散的方法

  • Patent Title: Semiconductor device having diffusion barriers and a method of preventing diffusion of copper in a metal interconnection of a semiconductor device
  • Patent Title (中): 具有扩散阻挡层的半导体器件和防止铜在半导体器件的金属互连中扩散的方法
  • Application No.: US11559724
    Application Date: 2006-11-14
  • Publication No.: US07670948B2
    Publication Date: 2010-03-02
  • Inventor: Jae Suk Lee
  • Applicant: Jae Suk Lee
  • Applicant Address: KR Seoul
  • Assignee: Dongbu HiTek Co., Ltd.
  • Current Assignee: Dongbu HiTek Co., Ltd.
  • Current Assignee Address: KR Seoul
  • Agency: Sherr & Vaughn, PLLC
  • Priority: KR10-2005-0109011 20051115
  • Main IPC: H01L21/4763
  • IPC: H01L21/4763 ;  H01L23/48
Semiconductor device having diffusion barriers and a method of preventing diffusion of copper in a metal interconnection of a semiconductor device
Abstract:
Embodiments of a semiconductor device and a method of fabricating the same may include an insulating layer formed on a substrate and having a predetermined hole, a metal interconnection formed in the hole and protruding relative to the insulating layer, a first barrier extending in a lateral direction of the metal interconnection, a second barrier formed on the metal interconnection, and a metal pad formed on the second barrier.
Abstract(Chinese):

半导体器件及其制造方法的实施例可以包括形成在基板上并具有预定孔的绝缘层，形成在孔中并相对于绝缘层突出的金属互连，沿横向延伸的第一屏障 的金属互连，形成在金属互连上的第二屏障，以及形成在第二屏障上的金属焊盘。

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IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00 专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02 .半导体器件或其部件的制造或处理
H01L21/04 ..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34 ...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46 ....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461 .....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763 ......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）
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