Semiconductor device and method of manufacturing semiconductor device

Invention Grant

US07670949B2 Semiconductor device and method of manufacturing semiconductor device 失效

Title translation: 半导体装置及其制造方法

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Patent Title: Semiconductor device and method of manufacturing semiconductor device
Patent Title (中): 半导体装置及其制造方法
Application No.: US11690527

Application Date: 2007-03-23
Publication No.: US07670949B2

Publication Date: 2010-03-02
Inventor: Chiharu Iriguchi
Applicant: Chiharu Iriguchi
Applicant Address: JP Tokyo
Assignee: Seiko Epson Corporation
Current Assignee: Seiko Epson Corporation
Current Assignee Address: JP Tokyo
Agency: Oliff & Berridge, PLC
Priority: JP2006-084936 20060327
Main IPC: H01L21/4763
IPC: H01L21/4763

Semiconductor device and method of manufacturing semiconductor device

Abstract:

A method of manufacturing a semiconductor device includes: forming a first photosensitive material pattern having an opening hole on a work target layer formed on an active surface of a substrate; performing a first etching by performing an etching treatment to the work target layer using the first photosensitive material pattern as a mask, and forming one of a concave and a groove in a tapered shape with a wide opening to the work target layer while enlarging the opening hole, by performing the etching treatment so as to enlarge the opening hole; and filling a metal film into one of the concave and the groove.

Abstract(Chinese):

一种制造半导体器件的方法包括：在形成在衬底的有源表面上的工件目标层上形成具有开孔的第一感光材料图案; 通过使用第一感光材料图案作为掩模对作业对象层进行蚀刻处理，并且在扩大开口部的同时向工作目标层开口形成具有宽开口的锥形形状的凹槽和凹槽之一来进行第一蚀刻通过进行蚀刻处理以扩大开孔; 并将金属膜填充到凹部和凹槽中的一个中。

Public/Granted literature

US20070224835A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2007-09-27

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）