Invention Grant
- Patent Title: Production method for silicon wafers and silicon wafer
- Patent Title (中): 硅晶片和硅晶片的生产方法
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Application No.: US11053440Application Date: 2005-02-09
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Publication No.: US07670965B2Publication Date: 2010-03-02
- Inventor: Yoshinobu Nakada , Hiroyuki Shiraki
- Applicant: Yoshinobu Nakada , Hiroyuki Shiraki
- Applicant Address: JP Tokyo
- Assignee: Sumitomo Mitsubishi Silicon Corporation
- Current Assignee: Sumitomo Mitsubishi Silicon Corporation
- Current Assignee Address: JP Tokyo
- Agency: Pillsbury Winthrop Shaw Pittman, LLP
- Priority: JP2000-360913 20001128; JP2001-139216 20010509; JP2001-291145 20010925
- Main IPC: H01L21/26
- IPC: H01L21/26 ; H01L21/42 ; H01L21/324 ; H01L21/477 ; H01L21/31
Abstract:
A silicon wafer is thermal-annealed in an atmosphere to form new vacancies therein by thermal annealing and the atmosphere in the thermal annealing contains a nitride gas having a lower decomposition temperature than a decomposable temperature of N2 so that the thermal annealing is carried out at a lower temperature or for a short time to suppress generation of slip and to provide satisfactory surface roughness.
Public/Granted literature
- US20050130452A1 Production method for silicon wafers and silicon wafer Public/Granted day:2005-06-16
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