Invention Grant
US07671001B2 Alkaline, post plasma etch/ash residue removers and photoresist stripping compositions containing metal-halide corrosion inhibitors
失效
碱性，后等离子体蚀刻/灰渣去除剂和含有金属卤化物腐蚀抑制剂的光致抗蚀剂剥离组合物
- Patent Title: Alkaline, post plasma etch/ash residue removers and photoresist stripping compositions containing metal-halide corrosion inhibitors
- Patent Title (中): 碱性，后等离子体蚀刻/灰渣去除剂和含有金属卤化物腐蚀抑制剂的光致抗蚀剂剥离组合物
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Application No.: US10572860Application Date: 2004-10-20
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Publication No.: US07671001B2Publication Date: 2010-03-02
- Inventor: David C. Skee
- Applicant: David C. Skee
- Applicant Address: US NJ Phillipsburg
- Assignee: Mallinckrodt Baker, Inc.
- Current Assignee: Mallinckrodt Baker, Inc.
- Current Assignee Address: US NJ Phillipsburg
- Agency: Ohlandt, Greeley, Ruggiero & Perle
- Agent George W. Rauchfuss, Jr.
- International Application: PCT/US2004/034541 WO 20041020
- International Announcement: WO2005/043245 WO 20050512
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
The invention provides alkaline compositions useful in the microelectronics industry for stripping or cleaning semiconductor wafer substrates by removing photoresist residues and other unwanted contaminants. The compositions contain (a) one or more bases and (b) one or more metal corrosion inhibiting metal halides of the formula: WzMXy where M is a metal selected from the group Si, Ge, Sn, Pt, P, B, Au, Ir, Os, Cr, Ti, Zr, Rh, Ru, and Sb; X is a halide selected from F, Cl, Br and I; W is selected from H, to an alkali or alkaline earth metal, and a metal ion-free hydroxide base moiety; y is a numeral of from 4 to 6 depending on the metal halide; and z is a numeral of 1, 2 or 3.
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