Invention Grant
US07671166B2 High internal free volume compositions for low-k dielectric and other applications
失效
用于低k电介质和其他应用的高内部自由体积组成
- Patent Title: High internal free volume compositions for low-k dielectric and other applications
- Patent Title (中): 用于低k电介质和其他应用的高内部自由体积组成
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Application No.: US11336417Application Date: 2006-01-20
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Publication No.: US07671166B2Publication Date: 2010-03-02
- Inventor: Timothy M. Swager , Jean Bouffard
- Applicant: Timothy M. Swager , Jean Bouffard
- Applicant Address: US MA Cambridge
- Assignee: Massachusetts Institute of Technology
- Current Assignee: Massachusetts Institute of Technology
- Current Assignee Address: US MA Cambridge
- Agency: Wolf, Greenfield & Sacks, P.C.
- Main IPC: C08G65/38
- IPC: C08G65/38 ; C08G61/02
Abstract:
The present invention provides materials, devices, and methods involving new heterocyclic, shape-persistent monomeric units with internal free volume. In some cases, materials the present invention may comprise monomers, oligomers, or polymers that incorporate a heterocyclic, shape-persistent iptycene. The present invention may provide materials having low dielectric constants and improved stability at high operating temperatures due to the electron-poor character of materials. In addition, compositions of the invention may be easily synthesized and readily modified to suit a particular application.
Public/Granted literature
- US20070117954A1 High internal free volume compositions for low-k dielectric and other applications Public/Granted day:2007-05-24
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