Invention Grant
- Patent Title: Perylene n-type semiconductors and related devices
- Patent Title (中): 苝n型半导体及相关器件
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Application No.: US11043814Application Date: 2005-01-26
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Publication No.: US07671202B2Publication Date: 2010-03-02
- Inventor: Tobin J. Marks , Michael R. Wasielewski , Antonio Facchetti , Michael J. Ahrens , Brooks A. Jones , Myung-Han Yoon
- Applicant: Tobin J. Marks , Michael R. Wasielewski , Antonio Facchetti , Michael J. Ahrens , Brooks A. Jones , Myung-Han Yoon
- Applicant Address: US IL Evanston
- Assignee: Northwestern University
- Current Assignee: Northwestern University
- Current Assignee Address: US IL Evanston
- Agency: K&L Gates LLP
- Main IPC: C07D471/02
- IPC: C07D471/02 ; C07D471/00
Abstract:
Mono- and diimide perylene and naphthalene compounds, N- and core-substituted with electron-withdrawing groups, for use in the fabrication of various device structures.
Public/Granted literature
- US20050176970A1 Perylene n-type semiconductors and related devices Public/Granted day:2005-08-11
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