Invention Grant
- Patent Title: Semiconductor device and method of producing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US11849522Application Date: 2007-09-04
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Publication No.: US07671360B2Publication Date: 2010-03-02
- Inventor: Natsuki Sato , Tsutomu Hayakawa
- Applicant: Natsuki Sato , Tsutomu Hayakawa
- Applicant Address: JP Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2006-246692 20060912
- Main IPC: H01L29/08
- IPC: H01L29/08
Abstract:
A phase change memory includes a sidewall insulation film and a heater electrode which are formed in a contact hole formed in an interlayer insulation film on a lower electrode. The heater electrode has a recessed structure. In a recessed area surrounded by the sidewall insulation film, the heater electrode and a phase change film are contacted with each other. A phase change region is formed only in an area contacted with the sidewall insulation film. The sidewall insulation film is an anti-oxidizing insulation film. The phase change region and the heater electrode which are heated to a high temperature upon rewriting are not contacted with the interlayer insulation film as an oxidizing insulation film.
Public/Granted literature
- US20080061282A1 SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THE SAME Public/Granted day:2008-03-13
Information query
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