Semiconductor layer structure and method of making the same

Invention Grant

US07671371B2 Semiconductor layer structure and method of making the same 失效

Title translation: 半导体层结构及制作方法

Please log in to see more content

Patent Title: Semiconductor layer structure and method of making the same
Patent Title (中): 半导体层结构及制作方法
Application No.: US12165445

Application Date: 2008-06-30
Publication No.: US07671371B2

Publication Date: 2010-03-02
Inventor: Sang-Yun Lee
Applicant: Sang-Yun Lee
Agency: Schmeiser, Olsen & Watts LLP
Main IPC: H01L29/26
IPC: H01L29/26 ; H01L27/15

Semiconductor layer structure and method of making the same

Abstract:

A semiconductor layer structure includes a donor substrate and a detach region carried by the donor substrate. A device structure is carried by the donor substrate and positioned proximate to the detach region. The device structure includes a stack of crystalline semiconductor layers. The stack of crystalline semiconductor layers includes a pn junction.

Abstract(Chinese):

半导体层结构包括施主衬底和由供体衬底承载的剥离区域。器件结构由施主衬底承载并定位成靠近分离区。器件结构包括一堆结晶半导体层。晶体半导体层的堆叠包括pn结。

Public/Granted literature

US20080265360A1 Semiconductor Layer Structure And Method Of Making The Same Public/Granted day:2008-10-30

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/02	.按其半导体本体的特征区分的
H01L29/12	..按其构成材料的特征区分的
H01L29/26	...除掺杂材料或其他杂质外，包括有包含在H01L29/16，H01L29/18，H01L29/20，H01L29/22，H01L29/24各组中两组或更多个组内的元素的