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Invention Grant
US07671379B2 Semiconductor system for voltage limitation 有权
电压限制半导体系统

  • Patent Title: Semiconductor system for voltage limitation
  • Patent Title (中): 电压限制半导体系统
  • Application No.: US11662614
    Application Date: 2005-07-15
  • Publication No.: US07671379B2
    Publication Date: 2010-03-02
  • Inventor: Alfred Goerlach
  • Applicant: Alfred Goerlach
  • Applicant Address: DE Stuttgart
  • Assignee: Robert Bosch GmbH
  • Current Assignee: Robert Bosch GmbH
  • Current Assignee Address: DE Stuttgart
  • Agency: Kenyon & Kenyon LLP
  • Priority: DE102004044141 20040913
  • International Application: PCT/EP2005/053402 WO 20050715
  • International Announcement: WO2006/029921 WO 20060323
  • Main IPC: H01L29/78
  • IPC: H01L29/78
Semiconductor system for voltage limitation
Abstract:
A semiconductor system for voltage limitation includes a first cover electrode, a highly p-doped semiconductor layer that is connected to the first cover electrode, a slightly n-doped semiconductor layer that is connected to the highly p-doped semiconductor layer and a second cover electrode. At least one p-doped semiconductor layer and two highly n-doped semiconductor layers are provided next to one another in an alternating sequence between the slightly n-doped semiconductor layer and the second cover electrode.
Abstract(Chinese):

一种用于电压限制的半导体系统包括第一覆盖电极，连接到第一覆盖电极的高p掺杂半导体层，连接到高度掺杂p型半导体层的略微n掺杂的半导体层，以及第二覆盖层 电极。 在稍微n掺杂的半导体层和第二覆盖电极之间的交替序列中彼此相邻地提供至少一个p掺杂的半导体层和两个高n掺杂的半导体层。

Public/Granted literature
Information query
Espacenet
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66 .按半导体器件的类型区分的
H01L29/68 ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/76 ...单极器件
H01L29/772 ....场效应晶体管
H01L29/78 .....由绝缘栅产生场效应的
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