Invention Grant
- Patent Title: Semiconductor device and manufacturing the same
- Patent Title (中): 半导体器件和制造相同
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Application No.: US12341330Application Date: 2008-12-22
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Publication No.: US07671381B2Publication Date: 2010-03-02
- Inventor: Fumitaka Nakayama , Masatoshi Morikawa , Yutaka Hoshino , Tetsuo Uchiyama
- Applicant: Fumitaka Nakayama , Masatoshi Morikawa , Yutaka Hoshino , Tetsuo Uchiyama
- Applicant Address: JP Tokyo JP Tokyo
- Assignee: Renesas Eastern Japan Semiconductor, Inc.,Renesas Technology Corporation
- Current Assignee: Renesas Eastern Japan Semiconductor, Inc.,Renesas Technology Corporation
- Current Assignee Address: JP Tokyo JP Tokyo
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP2002-282366 20020927; JP2002-377030 20021226
- Main IPC: H01L29/00
- IPC: H01L29/00
Abstract:
A semiconductor device including a MISFET formed in a well at a main surface of a substrate, a second MISFET formed at a main surface of the substrate, and a passive element formed over the main surface of the substrate and having two terminals. A conductive film is formed at a rear face of the semiconductor substrate. The conductive film is connected with a fixed potential and also electrically connected with the conductive film.
Public/Granted literature
- US20090108371A1 SEMICONDUCTOR DEVICE AND MANUFACTURING THE SAME Public/Granted day:2009-04-30
Information query
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