Invention Grant
- Patent Title: Semiconductor device with thermoplastic resin to reduce warpage
- Patent Title (中): 半导体器件采用热塑性树脂来减少翘曲
-
Application No.: US11462224Application Date: 2006-08-03
-
Publication No.: US07671382B2Publication Date: 2010-03-02
- Inventor: Shingo Sudo , Tatsuo Ota , Nobutake Taniguchi , Hiroshi Yoshida , Hironori Kashimoto
- Applicant: Shingo Sudo , Tatsuo Ota , Nobutake Taniguchi , Hiroshi Yoshida , Hironori Kashimoto
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2005-364408 20051219
- Main IPC: H01L41/047
- IPC: H01L41/047

Abstract:
A semiconductor device which includes a radiating plate, a wiring patterned layer on the radiating plate via an insulating layer, at least one semiconductor chip mounted on the wiring patterned layer. The semiconductor chip has a surface electrode. The semiconductor device further includes a conductive lead plate electrically connected with the surface electrode of the semiconductor chip, and a resin package of thermoplastic resin having anisotropic linear expansion coefficient varying based upon directions. The resin package covers the wiring patterned layer, the semiconductor chip, the conductive lead plate, and at least a portion of the radiating plate. The conductive lead plate extends in a direction which provides the resin package with the maximum linear expansion coefficient. In the semiconductor device so structured, the warpage of the resin package is reduced both in longitudinal and transverse directions.
Public/Granted literature
- US20070138624A1 SEMICONDUCTOR DEVICE Public/Granted day:2007-06-21
Information query
IPC分类: