Invention Grant
- Patent Title: Semiconductor device and method for manufacture
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US11628130Application Date: 2005-05-25
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Publication No.: US07671390B2Publication Date: 2010-03-02
- Inventor: Jan Sonsky , Erwin A. Hijzen , Michael A. A. In 'T Zandt
- Applicant: Jan Sonsky , Erwin A. Hijzen , Michael A. A. In 'T Zandt
- Applicant Address: NL Eindhoven
- Assignee: NXP B.V.
- Current Assignee: NXP B.V.
- Current Assignee Address: NL Eindhoven
- Priority: GB0411971.5 20040528
- International Application: PCT/IB2005/051715 WO 20050525
- International Announcement: WO2005/117073 WO 20051208
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L29/00
Abstract:
A semiconductor device is formed with a lower field plate (32) and optional lateral field plates (34) around semiconductor (20) in which devices are formed, for example power FETs or other transistor or diode types. The semiconductor device is manufactured by forming trenches with insulated sidewalls, etching cavities (26) at the base of the trenches which join up and then filling the trenches with conductor (30).
Public/Granted literature
- US20070246754A1 Semiconductor Device and Method for Manufacture Public/Granted day:2007-10-25
Information query
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