Invention Grant
US07671410B2 Design and fabrication of rugged FRED, power MOSFET or IGBT
有权
坚固的FRED，功率MOSFET或IGBT的设计和制造
- Patent Title: Design and fabrication of rugged FRED, power MOSFET or IGBT
- Patent Title (中): 坚固的FRED，功率MOSFET或IGBT的设计和制造
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Application No.: US11614897Application Date: 2006-12-21
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Publication No.: US07671410B2Publication Date: 2010-03-02
- Inventor: Shanqi Zhao , Dumitru Sdrulla
- Applicant: Shanqi Zhao , Dumitru Sdrulla
- Applicant Address: US OR Bend
- Assignee: Microsemi Corporation
- Current Assignee: Microsemi Corporation
- Current Assignee Address: US OR Bend
- Agency: Marger Johnson & McCollom, P.C.
- Main IPC: H01L29/76
- IPC: H01L29/76
Abstract:
An improved Fast Recovery Diode comprises a main PN junction defining a central conduction region for conducting high current in a forward direction and a peripheral field spreading region surrounding the central conduction region for blocking high voltage in the reverse direction. The main PN junction has an avalanche voltage equal to or lower than an avalanche voltage of the peripheral field spreading region so substantially the entire said main PN junction participates in avalanche conduction. This rugged FRED structure can also be formed in MOSFETS, IGBTS and the like.
Public/Granted literature
- US20070096237A1 DESIGN AND FABRICATION OF RUGGED FRED, POWER MOSFET OR IGBT Public/Granted day:2007-05-03
Information query
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